CHA2395 rohs compliant ref. : dsCHA23952240 -28-aug.-02 1/6 specifications subject to change without notice united monolithic semiconductors s.a.s. route dpartementale 128 - b.p.46 - 91401 orsay cede x france tel. : +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 36-40ghz low noise very high gain amplifier gaas monolithic microwave ic description the CHA2395 is a four-stage monolithic low noise amplifier. it is designed for a wide range of applications, from military to commercial communication systems. the circuit is manufactured with a phemt process: 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. it is available in chip form. main features broadband performances 3.0db noise figure 30db gain 1.0db gain flatness low dc power consumption, 90ma@3.5v chip size: 2.07 x 1.11 x 0.10 mm vd vd vg 1,2 vg 3,4 in out typical on wafer measurements main characteristics tamb. = 25c symbol parameter min typ max unit fop operating frequency range 36 40 ghz g small signal gain 25 30 db p1db output power at 1db gain compression 8 10 dbm nf noise figure 3.0 4.0 db esd protection : electrostatic discharge sensitive device. observe handling precautions ! 5 10 15 20 25 30 35 30 31 32 33 34 35 36 37 38 39 40 frequency (ghz) gain (db) 0 1 2 3 4 5 6 nf (db)
CHA2395 36-40ghz low noise amplifier ref. : dsCHA23952240 -28-aug.-02 2/6 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 electrical characteristics tamb = +25c, vd= 3.5v symbol parameter min typ max unit fop operating frequency range (1) 36 40 ghz g small signal gain (1) 25 30 db d g small signal gain flatness (1) 1.5 db d gsb gain ripple over 40mhz ( within -30 ; +75c ) 0.5 dbpp is reverse isolation (1) 35 40 db p1db output power at 1db gain compression 8 10 dbm vswrin input vswr (1) 2.5:1 3.0:1 vswrout output vswr (1) 2.5:1 3.0:1 nf noise figure (2) 3.0 4.0 db vdc dc voltage vd vg -2 3.5 4 +0.4 v v id bias current (2) 90 ma (1) these values are representative of on-wafer mea surements that are made without bonding wires at the rf ports. (2) 90 ma is the typical bias current used for on w afer measurements, with adjusting vg1,2 voltage for optimum noise figure and vg3,4 adjustin g for maximum gain. absolute maximum ratings tamb. = 25c (1) symbol parameter values unit vd drain bias voltage 4.5 v vg gate bias voltage -2.0 to +0.4 v vdg maximum drain to gate voltage (vd - vg) +5.0 v id drain bias current 200 ma pin maximum peak input power overdrive (2) +15 dbm ta operating temperature range -40 to +85 c tstg storage temperature range -55 to +125 c (1) operation of this device above anyone of these parameters may cause permanent damage. (2) duration < 1s.
36-40ghz low noise amplifier CHA2395 ref. : dsCHA23952240 -28-aug.-02 3/6 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical scattering parameters ( on wafer sij measurements ) bias conditions : vd= 3.5 volt, id = 90 ma. freq. ghz s11 db s11 / // / s12 db s12 / // / s21 db s21 / // / s22 db s22 / // / 10 -5,24 -150,46 -56,39 -137,29 -24,05 -93,70 -6,44 -135,98 11 -5,01 -158,16 -55,20 -143,40 -25,15 -112,11 -6,5 2 -142,09 12 -4,78 -165,56 -53,92 -154,87 -26,75 -128,23 -6,5 5 -148,02 13 -4,69 -174,08 -51,99 -164,65 -26,78 -139,11 -6,4 4 -151,89 14 -4,48 178,30 -50,31 175,46 -29,21 -171,28 -6,37 -157,82 15 -4,30 170,74 -50,32 148,72 -29,88 -145,86 -6,22 -163,81 16 -4,14 163,09 -49,22 142,18 -31,36 -164,90 -6,10 -169,58 17 -4,06 155,51 -49,15 127,08 -32,88 -167,67 -5,89 -175,56 18 -3,96 147,86 -48,70 105,03 -35,34 177,24 -5,79 1 77,73 19 -3,90 139,92 -51,67 105,23 -38,52 -157,62 -5,56 172,92 20 -3,86 131,40 -50,35 95,30 -38,79 -162,11 -5,26 1 65,80 21 -3,87 122,89 -49,65 83,53 -38,83 -167,49 -4,99 1 58,13 22 -3,89 113,01 -49,59 72,64 -46,84 157,47 -4,88 15 0,61 23 -4,01 103,05 -49,29 63,32 -41,57 21,50 -4,75 142 ,43 24 -4,20 92,06 -48,05 44,03 -30,98 8,81 -4,67 134,0 0 25 -4,54 79,42 -48,35 23,21 -23,89 -1,06 -4,58 124, 88 26 -5,02 65,00 -49,93 -1,87 -17,47 -4,35 -4,53 115, 26 27 -5,79 47,39 -52,57 -14,93 -11,19 -13,07 -4,53 10 4,69 28 -6,86 25,74 -58,44 -26,41 -4,59 -23,29 -4,50 93, 03 29 -8,43 -4,01 -63,19 36,76 2,43 -38,25 -4,51 79,20 30 -10,32 -48,95 -55,24 45,06 10,00 -60,29 -4,54 62 ,45 31 -10,65 -117,68 -53,31 -1,55 18,04 -93,20 -4,40 3 9,47 32 -8,00 166,44 -53,65 -52,02 25,85 -144,54 -4,42 3 ,69 33 -8,21 89,15 -79,13 17,74 30,33 144,38 -6,32 -46, 81 34 -11,99 29,31 -60,45 -9,35 30,68 82,74 -9,78 -94, 59 35 -15,87 -33,40 -59,01 -74,65 30,91 36,21 -10,50 - 134,35 36 -14,87 -104,81 -57,53 -151,67 31,07 -6,18 -10,26 -167,64 37 -11,78 -165,28 -56,31 150,87 31,05 -47,23 -9,47 163,94 38 -9,85 150,77 -54,01 109,01 30,82 -86,98 -9,53 13 9,99 39 -9,90 110,22 -53,25 84,99 30,03 -124,36 -10,02 1 20,62 40 -10,31 70,60 -52,00 74,63 29,21 -159,55 -10,97 1 07,97 41 -11,12 23,32 -49,03 82,09 28,21 167,67 -12,82 99 ,68 42 -10,97 -34,96 -44,98 72,62 26,87 135,99 -12,78 1 01,14 43 -11,41 -81,68 -44,03 33,59 25,36 111,44 -12,23 8 8,12 44 -10,12 -107,79 -43,67 15,35 24,92 87,03 -14,15 7 3,36 45 -9,49 -124,05 -43,94 -3,05 24,57 60,05 -15,44 63 ,47 46 -8,37 -137,10 -42,57 -16,03 24,33 31,65 -18,63 3 7,49 47 -6,94 -141,65 -42,19 -36,05 24,14 -0,62 -26,50 - 44,90 48 -4,56 -148,72 -42,90 -62,08 23,38 -38,45 -16,32 -150,01 49 -2,37 -162,95 -45,30 -98,56 21,22 -76,12 -11,15 172,71 50 -1,12 -178,98 -46,39 -149,92 18,32 -110,54 -9,10 145,34
CHA2395 36-40ghz low noise amplifier ref. : dsCHA23952240 -28-aug.-02 4/6 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical on wafer measurements tamb = +25c vds=3.5v and id=90ma 5 10 15 20 25 30 35 30 31 32 33 34 35 36 37 38 39 40 frequency (ghz) gain (db) 0 1 2 3 4 5 6 nf (db) -20 -10 0 10 20 30 30 35 40 45 50 frequency (ghz) gain&rloss (db) dbs11 dbs21 dbs22
36-40ghz low noise amplifier CHA2395 ref. : dsCHA23952240 -28-aug.-02 5/6 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 chip assembly and mechanical data in out 100pf to vdd dc drain supply feed to vgs2 dc gate supply feed to vgs1 dc gate supply feed 100pf 100pf note : supply feed should be capacitively bypassed. 2070 +/-35 1000 700 1110 +/-35 520 880 1480 520 bonding pad positions. (chip thickness: 100m. all dimensions are in micro meters)
CHA2395 36-40ghz low noise amplifier ref. : dsCHA23952240 -28-aug.-02 6/6 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical bias tuning for low noise operation the circuit schematic is given below: in out vd vg 1,2 vg 3,4 vd 100 100 50 50 for low noise operation, a separate access to the g ate voltages of the two first stages (vg1, 2), and of the two last stage (vg3, 4 ) is provided . nominal bias is obtained for a typical current of 60 ma for the output stages and 30 ma fo r the two first stages (90 ma for the amplifier). the first step to bias the amplifier is to tune vg1 , 2 = -1v, and vg3, 4 to drive 60 ma for the full amplifier. then vg1, 2 is increased to obtain 90 ma of current through the amplifier. a fine tuning of the noise figure may be obtained by modifying the vg1, 2 bias voltage, but keeping the previous value for vg3, 4. it is possible to reduce the total dc current by bi asing vg3, 4 to a more negative value. the consequences will be a reduction of gain and of the output power capabilities of the amplifier. vd could be adjust in such a way that the vds (drai n to source voltage of the internal transistor) is kept below 3.5v, knowing that all th e transistors have the same sizes and with the given resistors . ordering information chip form : CHA2395-99f/00 information furnished is believed to be accurate an d reliable. however united monolithic semiconductors s.a.s. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by impli cation or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and re places all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or s ystems without express written approval from united monolithic semiconductors s.a.s.
|
